METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING DEVICE, SUBSTRATE PROCESSING SYSTEM, AND STORAGE MEDIUM

摘要

The present invention has: a step for forming on a substrate a thin film containing a prescribed element, oxygen, and carbon by performing a prescribed number of cycles including the steps of: supplying to the substrate a raw material gas containing the prescribed element, carbon, and a halogen element, the prescribed element and the carbon being chemically bonded; supplying an oxide gas to the substrate; and supplying a catalyst gas to the substrate; a step for removing a first impurity from the thin film by heat-treating the thin film at a first temperature higher than the temperature of the substrate during the step for forming the thin film; and a step for removing a second impurity differing from the first impurity from the thin film, which has undergone heat-treatment at the first temperature, the second impurity being removed by heat-treating the thin film at a second temperature equal to or greater than the first temperature.