SEMICONDUCTOR ELEMENT, SPUTTERING TARGET MATERIAL, AND SEMICONDUCTOR DEVICE

摘要

The present invention is able to increase the reliability of an electrode film under a high-temperature environment. The semiconductor element (20) has an electrode film (21) comprising aluminum as a main component. Dispersed and deposited in this electrode film (21) are second phase particles containing aluminum and an additive metal added to aluminum, the surface area ratio of the second phase particles being 9% or greater. The electrode film (21) of the semiconductor element (20) becomes rigid through deposition and hardening occurring therein. Consequently, the occurrence of stress migration under a high-temperature environment being suppressed for the electrode film (21), resistance to thermal cycling is increased and reliability is increased. Therefore, reliability is increased and life span is improved for the semiconductor element (20) containing the electrode film (21) as well.