| 摘要 |
In a semiconductor device (SP1) according to one embodiment, between a substrate layer (2CR) of a wiring board (2) and a semiconductor chip (3), a solder resist film (first insulating layer (SR1)) which adheres closely to the substrate layer, and a resin body (second insulating layer (4)) which adheres closely to the solder resist film and the semiconductor chip, are stacked. Furthermore, the linear expansion coefficient of the solder resist film is greater than or equal to the linear expansion coefficient of the substrate layer, the linear expansion coefficient of the solder resist film is less than or equal to the linear expansion coefficient of the resin body, and the linear expansion coefficient of the substrate layer is less than the linear expansion coefficient of the resin body. According to the configuration, it is possible to suppress damage to the semiconductor device caused by a temperature cycle load, and to improve reliability. |
