| 摘要 |
The semiconductor device of the embodiment is provided with a first conducting layer, a second conducting layer, and, between the first conducting layer and the second conducting layer, a dielectric film containing a fluorite crystal, wherein positive ion sites contain at least any one of Hf (hafnium) or Zr (zirconium) and negative ion sites contain O (oxygen), and, a, b and c fulfill a predetermined relationship, when, among the three axes of the primitive unit cell of the crystal, the axis in the direction with no inversion symmetry is the c-axis, the layering direction of two species of atom planes formed by negative ions in different arrangement positions is the a-axis, and the remainder is the b-axis, a is the axis length of the a-axis of the primitive unit cell, b is the axis length of the b-axis, and c is the axis length of the c-axis, p is a parameter, and x, y, z, u, v and w are values represented using the parameter p. |
