发明名称 |
RECONFIGURABLE MULTI-STACK INDUCTOR |
摘要 |
A reconfigurable multi-stack inductor formed within a semiconductor structure may include a first inductor structure located within a first metal layer of the semiconductor structure, a first ground shielding structure located within the first metal layer that is electrically isolated from and circumferentially bounds the first inductor structure, and a second inductor structure located within a second metal layer of the semiconductor structure, whereby the second inductor structure is electrically coupled to the first inductor structure. A second ground shielding structure located within the second metal layer is electrically isolated from and circumferentially bounds the second inductor structure, whereby the first and second inductor generate a first inductance value based on the first ground shielding structure and second ground shielding structure being coupled to ground, and the first and second inductor generate a second inductance value based on the first ground shielding structure and second ground shielding structure electrically floating. |
申请公布号 |
WO2015043419(A1) |
申请公布日期 |
2015.04.02 |
申请号 |
WO2014CN86876 |
申请日期 |
2014.09.19 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION;IBM (CHINA) CO., LIMITED |
发明人 |
SUN, PINGPING;PEI, CHENGWEN;XU, ZHENG |
分类号 |
H01F21/12;H01L23/64 |
主分类号 |
H01F21/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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