| 摘要 |
According to an embodiment of the present invention, an etching solution composition comprises, with respect to the total weight of the etching solution composition: 0.5 to 20% by weight of persulfate; 0.01 to 1% by weight of a fluorine compound; 1 to approximately 10% by weight of a mineral acid; 0.01 to 2% by weight of an azole-based compound; 0.1 to 5% by weight of a chloride compound; 0.05 to 3% by weight of copper salt; 0.01 to 5% by weight of antioxidants or salt of the antioxidants; and the remainder of water so that the total weight of the composition can be 100% by weight. The etching solution composition can be used to form a metal wiring or manufacture a thin film transistor substrate for a display by etching a metal film including copper. |
