| 摘要 |
<p>Provided are a semiconductor device and a method for fabricating the same. The semiconductor device comprises a substrate including a cell array area and a surrounding circuit area; a laminated structures having the first height on the substrate of the cell array area, and extended in the first direction; a common source structure arranged between the laminated structures adjacent to each other; a surrounding logic structure having the second height lower than the first height of the substrate; multiple upper wires extended in line from the surrounding logic structure to the cell array structure; and a wire structure arranged between the surrounding logic structure and the multiple upper wires in a vertical aspect, to be electrically connected with at least two among the multiple upper wires, wherein the wire structure can have an upper surface located between the upper surface of the common source structure and the lower surfaces of the upper wires in a vertical aspect.</p> |
