| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for manufacturing a high-purity copper manganese alloy sputtering target advantageous for forming a copper alloy wiring for a semiconductor having a self-diffusion restraining function.SOLUTION: In a method, a high-purity copper manganese alloy sputtering target containing 0.05-20 wt% Mn, C2 wtppm or less, and residual of Cu and inevitable impurities is manufactured. In a carbon crucible, high-purity copper with 6N or more purity and manganese with 5N or more purity are molten at 1000-1400°C as raw materials, or in advance, the high-purity copper with 6N is molten in the crucible and then the manganese with 5N or more purity is added and molten. Then, molten alloy is casted to obtain a copper manganese alloy ingot. The ingot is hot-forged at 500-900°C, and cold-rolled, or hot-rolled and then cold-rolled to obtain a rolled sheet. Furthermore, it is heat-treated at 300-600°C, so as to manufacture a high-purity copper manganese alloy sputtering target. |
