发明名称 |
POWER RAIL FOR PREVENTING DC ELECTROMIGRATION |
摘要 |
A method is disclosed that includes the operations outlined below. A first criteria is determined to be met when directions of a first current and a second current around a first end and a second end of a metal segment respectively are opposite, in which the metal segment is a part of a power rail in at least one design file of a semiconductor device and is enclosed by only two terminal via arrays. A second criteria is determined to be met when a length of the metal segment is not larger than a electromigration critical length. The metal segment is included in the semiconductor device with a first current density limit depending on the length of the metal segment when the first and the second criteria are met. |
申请公布号 |
US2015095864(A1) |
申请公布日期 |
2015.04.02 |
申请号 |
US201314098435 |
申请日期 |
2013.12.05 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
LIN Chin-Shen;KAO Jerry Chang-Jui;KATTA Nitesh;LIN Chou-Kun;TSAI Yi-Chuin;YU Chi-Yeh;YANG Kuo-Nan |
分类号 |
G06F17/50 |
主分类号 |
G06F17/50 |
代理机构 |
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代理人 |
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主权项 |
1. A method comprising:
determining that a first criteria is met when directions of a first current and a second current around a first end and a second end of a metal segment respectively are opposite by using a computer, wherein the metal segment is a part of a power rail in at least one design file of a semiconductor device and is enclosed by two terminal via arrays; determining that a second criteria is met when a length of the metal segment is not larger than an electromigration critical length by using a computer; and including the metal segment in the at least one design file with a first current density limit depending on the length of the metal segment when the first and the second criteria are met by using a computer. |
地址 |
Hsinchu TW |