发明名称 LIQUID CRYSTAL DISPLAY DEVICE
摘要 There is provided a liquid crystal display device that enables increasing the capacitance between a pixel electrode and a common electrode without bringing about a significant decrease in the pixel aperture ratio. An In-Plane Switching LCD device in which a drain signal is supplied from one drain signal line to two pixel columns is configured such that there is a section having no drain signal line between adjacent pixels and a source electrode which is connected to a pixel electrode of a thin-film transistor extends into a contiguous pixel region that does not serve as an effective pixel region to provide one electrode of a capacitive element. A common electrode is formed in each pixel and the one electrode of the capacitive element is laid overlapping the common electrode with an insulation film intervening therebetween.
申请公布号 US2015091788(A1) 申请公布日期 2015.04.02
申请号 US201414564181 申请日期 2014.12.09
申请人 Japan Display Inc. ;Panasonic Liquid Crystal Display Co., Ltd. 发明人 NAGAMI Takahiro
分类号 G09G3/36 主分类号 G09G3/36
代理机构 代理人
主权项 1. A liquid crystal display device comprising: a first substrate and a second substrate placed to sandwich a liquid crystal layer therebetween; pixels located over a plane which faces the liquid crystal layer of the first substrate, each pixel including a first electrode and a second electrode placed over or under the first electrode with a first insulation film intervening therebetween, wherein one of the first and second electrodes serves as a pixel electrode which is supplied with an image signal and the other electrode serves as a common electrodes; and first and second gate signal lines configured so that a gate signal is supplied to each of the pixels by the first gate signal line and the second gate signal line, wherein each of the pixels includes a first pixel and a second pixel, and wherein the first pixel is connected to the first gate signal line and the second pixel is connected to the second gate signal line, wherein a first drain signal line and a second drain signal line extending in the second direction are located to sandwich the first pixel and the second pixel therebetween, wherein the first pixel is configured such that an image signal from the first drain signal line is supplied to the pixel electrode via a first thin-film transistor which is driven by a signal from the first gate signal line and placed close to the first gate signal line, wherein the second pixel is configured such that an image signal from the second drain signal line is supplied to the pixel electrode via a second thin-film transistor which is driven by a signal from the second gate signal line and placed close to the second gate signal line, wherein a source electrode, which is electrically connected to the pixel electrode of the first thin-film transistor, includes a first portion and a second portion, the first portion extending in the first direction from the first thin film transistor toward the second drain signal line, and the second portion extending in the second direction from an end of the first potion toward the second gate signal line, wherein a source electrode, which is electrically connected to the pixel electrode of the second thin-film transistor, includes a third portion and a fourth portion, the third portion extending in the first direction from the second thin film transistor toward the first drain signal line, and the fourth portion extending in the second direction from an end of the third potion toward the first gate signal line, wherein the first portion and the second portion are formed on a same layer as the source electrode of the first thin film transistor, but are formed on a different layer from the pixel electrode of the first pixel, wherein the first and second portions form a capacitive element with the common electrode, wherein the third portion and the fourth portion are formed on a same layer as the source electrode of the second thin film transistor, but are formed on a different layer from the pixel electrode of the second pixel, and wherein the third and fourth portions form a capacitive element between the common electrode.
地址 Tokyo JP