发明名称 FILM FORMATION APPARATUS AND FILM FORMATION METHOD
摘要 A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.
申请公布号 US2015090693(A1) 申请公布日期 2015.04.02
申请号 US201414473157 申请日期 2014.08.29
申请人 NUFLARE TECHNOLOGY, INC. 发明人 ITO Hideki;SUZUKI Kunihiko;TSUCHIDA Hidekazu;KAMATA Isaho;ITO Masahiko;FUJIBAYASHI Hiroaki;NAITO Masami;ADACHI Ayumu;NISHIKAWA Koichi
分类号 C23C16/46;C23C16/455;C23C16/32;C23C16/458 主分类号 C23C16/46
代理机构 代理人
主权项 1. A film formation apparatus comprising: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole.
地址 Yokohama-shi JP