发明名称 |
FILM FORMATION APPARATUS AND FILM FORMATION METHOD |
摘要 |
A film formation apparatus according to an embodiment includes: a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole. |
申请公布号 |
US2015090693(A1) |
申请公布日期 |
2015.04.02 |
申请号 |
US201414473157 |
申请日期 |
2014.08.29 |
申请人 |
NUFLARE TECHNOLOGY, INC. |
发明人 |
ITO Hideki;SUZUKI Kunihiko;TSUCHIDA Hidekazu;KAMATA Isaho;ITO Masahiko;FUJIBAYASHI Hiroaki;NAITO Masami;ADACHI Ayumu;NISHIKAWA Koichi |
分类号 |
C23C16/46;C23C16/455;C23C16/32;C23C16/458 |
主分类号 |
C23C16/46 |
代理机构 |
|
代理人 |
|
主权项 |
1. A film formation apparatus comprising:
a film formation chamber performing film formation on a substrate; a cylindrical liner provided inside of a sidewall of the film formation chamber; a process-gas supply unit provided at a top of the film formation chamber and having a first gas ejection hole supplying a process gas to inside of the liner; a first heater provided outside the liner in the film formation chamber and heating the substrate from above; a second heater heating the substrate from below; and a shielding gas supply unit having a plurality of second gas ejection holes supplying a shielding gas to a position closer to a sidewall of the film formation chamber than a position of the first gas ejection hole. |
地址 |
Yokohama-shi JP |