ION BEAM PROCESSING METHOD AND ION BEAM PROCESSING APPARATUS

摘要

The present invention has an objective to provide a processing method and an ion beam processing apparatus capable of inhibiting deposition of redeposited films even for fine patterns. In an embodiment of the present invention, ion beam processing is performed such that an etching amount of an ion beam incident in extending directions of pattern trenches formed on a substrate is made larger than the etching amount of the ion beam incident in other directions. This processing enables fine patterns to be processed while inhibiting redeposited films from being deposited on the bottom portions of the trenches of the fine patterns.

主权项

1. An ion beam processing method of processing a substrate mounted on a substrate holder by using an ion beam extracted from a plasma source by a grid, the method comprising:
in performing ion beam etching on the substrate located with a tilt to the grid while rotating the substrate in an in-plane direction thereof, performing ion beam processing such that an etching amount of an ion beam incident from an extending direction of a pattern trench formed on the substrate is made larger than an etching amount of an ion beam incident from another direction.