| 摘要 |
The invention relates to a sputtering target containing Ga and Cu, with a Ga content of 30 to 68 At%, wherein the sputtering target contains only CuGa2 as Ga- and Cu-containing intermetallic phase or the volume % of CuGa2 is greater than the volume % of Cu9Ga4. The sputtering target is advantageously produced by spark plasma sintering or cold spray sintering. Compared with Cu9Ga4, CuGa2 is very soft, which promotes the production of defect-free sputtering targets with homogeneous sputtering performance. |
