| 摘要 |
This semiconductor film has: an aggregate of oxide microparticles including at least one metal selected from the group consisting of In, Zn, and Sn; and at least one ligand selected from the group consisting of ligands coordinated to the oxide microparticles and expressed in general formula (A), general formula (B), and general formula (C). [In general formula (A), X1 and X2 represent -SH, -NH2, -OH, or -COOH, and A1 and B1 represent a hydrogen atom or a substituent having an atomic number of 1 or greater and 10 or less. In general formula (B), X3and X4 represent -SH, -NH2, -OH, or -COOH, and A2 and B2 represent a hydrogen atom or a substituent having an atomic number of 1 or greater and 10 or less. In general formula (C), X5 represents -SH, -NH2, or -OH, and A3 represents a hydrogen atom or a substituent having an atomic number of 1 or greater and 10 or less.] |
