METHOD FOR MANUFACTURING LOW-TEMPERATURE POLYCRYSTALLINE SILICON THIN FILM, THIN FILM TRANSISTOR, AND DISPLAY APPARATUS

摘要

A method for manufacturing a low-temperature polycrystalline silicon thin film, a thin film transistor, and a display apparatus. The method for manufacturing a low-temperature polycrystalline silicon thin film comprises: depositing an amorphous silicon thin film on a substrate; covering an optical anti-reflection film on the amorphous silicon thin film; performing photoetching and etching on the optical anti-reflection film to enable a surface of the optical anti-reflection film to be of an array distributed light-condensing structure; and performing laser irradiation on the amorphous silicon thin film covered with the optical anti-reflection film, so as to convert the amorphous silicon thin film into the low-temperature polycrystalline silicon thin film. By using the foregoing method, the grain size and the uniformity of the low-temperature polycrystalline silicon thin film can be improved, and energy of incidence laser can be fully utilized, which helps to reduce the production cost of the low-temperature polycrystalline silicon thin film; and the performance of the low-temperature polycrystalline silicon thin film transistor is improved.