| 摘要 |
1,073,707. Semi-conductor devices. SIEMENS-SCHUCKERTWERKE A.G. Nov. 11, 1964 [Nov. 16, 1963], No. 46041/64. Heading H1K. In a semi-conductor device comprising four zones of alternate conductivity types in which one of the outer zones is formed as an annular region in the adjacent inner zone and contacts are made to the two outer zones and to the said inner zone within the annular outer zone, the entire outer line of emergence of the junction between the annular outer zone and the adjacent inner zone is bridged by a sandblasted surface region. As shown, an N-type silicon wafer 2 has a P-type surface region 3, 4 formed by diffusion. An annular gold-antimony foil is alloyed to one surface to produce N-type region 7 contacted by gold-silicon eutectic electrode 8. Simultaneously or subsequently boron-doped gold foils are alloyed to the wafer to form ohmic contacts 5 and 6. The edge of the wafer is removed by grinding or sandblasting to divide the P-type layer into two parts 3 and 4. The device is etched and the surface region 9 surrounding electrode 8 and bridging the junction between regions 4 and 7 is roughened by sandblasting to increase the surface conductivity and hence apply a partial short circuit across the junction without affecting the operation of the gate electrode 6.
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