| 摘要 |
<p>According to an embodiment of the present invention, an etching solution composition comprises: a first etching solution composition; and a second etching solution composition. The first etching solution composition includes: a persulfate compound; an azole compound; a water-soluble amine compound; a phosphate compound; a chlorine compound; an organic acid; a fluorine compound; a sulfonic acid compound; and an inorganic acid. The second etching solution composition includes: a persulfate compound; an azole compound; a water-soluble amine compound; a phosphate compound; a chlorine compound; and an organic acid.</p> |
