| 发明名称 |
ATOMIC LAYER DEPOSITION |
| 摘要 |
A method of depositing a material on a substrate using an atomic layer deposition process, wherein the deposition process comprises a first deposition step, a second deposition step subsequent to the first deposition step, and a delay of at least one minute between the first deposition step and the second deposition step. Each deposition step comprises a plurality of deposition cycles. The delay is introduced to the deposition process by prolonging a period of time for which a purge gas is supplied to a process chamber housing the substrate at the end of a selected one of the deposition cycles. |
| 申请公布号 |
US2015091134(A1) |
申请公布日期 |
2015.04.02 |
| 申请号 |
US201314390720 |
申请日期 |
2013.04.03 |
| 申请人 |
Dyson Technology Limited |
发明人 |
Amaratunga Gehan Anjil Joseph;Choi Youngjin;Shivareddy Sai Giridhar;Brown Nathan Charles;Collis Charles Anthony Neild |
| 分类号 |
H01L49/02;H01L21/02;C23C16/06;C23C16/455;C23C16/52 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of depositing a material on a substrate using an atomic layer deposition process, wherein the deposition process comprises a first deposition step, a second deposition step subsequent to the first deposition step, and a delay between the first deposition step and the second deposition step. |
| 地址 |
Wiltshire GB |
