SEMICONDUCTOR DEVICE

摘要

A field limiting regions are arranged in the upper surface of a semiconductor region in the peripheral region and connected to upper portions of at least some of columnar regions. An insulating film is provided on the semiconductor region in the peripheral region and covering a field limiting region. A coupling plate electrode is provided above a pair of the field limiting regions adjacent to each other in a direction from a boundary between the element region and the peripheral region to an outer edge of the peripheral region. The joint field regions are in contact with one of the pair of field limiting regions on a boundary side in an opening formed in the insulating film, and reaching the other one of the pair of the field limiting regions on an outer edge side with the insulating film interposed therebetween.

主权项

1. A semiconductor device, comprising:
an element region in which a semiconductor element is formed; a peripheral region provided around the element region; a first conductivity-type semiconductor region formed in the element region and the peripheral region; second conductivity-type columnar regions each provided in the semiconductor region of the peripheral region and formed in a ring shape surrounding the element region; second conductivity-type field limiting regions arranged in the upper surface of the semiconductor region in the peripheral region and connected to upper portions of at least some of the columnar regions; an insulating film provided on the semiconductor region in the peripheral region and covering the field limiting regions; and a coupling plate electrode provided above a pair of the field limiting regions adjacent to each other in a direction from a boundary between the element region and the peripheral region to an outer edge of the peripheral region, the coupling plate electrode being in contact with one of the pair of the field limiting regions on a boundary side in an opening formed in the insulating film, and reaching the other one of the pair of the field limiting regions on an outer edge side with the insulating film interposed therebetween.