CONTINUOUS TUNING OF ERBIUM SILICIDE METAL GATE EFFECTIVE WORK FUNCTION VIA A PVD NANOLAMINATE APPROACH FOR MOSFET APPLICATIONS

摘要

Erbium silicide layers can be used in CMOS transistors in which the work function of the erbium silicide layers can be tuned for use in PMOS and NMOS devices. A nano-laminate sputtering approach can be used in which silicon and erbium layers are alternatingly deposited to determine optimum layer properties, composition profiles, and erbium to silicon ratios for a particular gate stack.

主权项

1. A method of forming a metal gate stack, comprising:
providing a substrate; forming a first layer above the substrate,
wherein the first layer comprises a dielectric material; forming a multilayer comprising a second layer and a third layer above the first layer,
wherein the second layer comprises silicon,wherein the third layer comprises erbium; and annealing the second and third layers to form an erbium silicide layer.