| 发明名称 |
LIGHT EMITTING DIODE |
| 摘要 |
Disclosed herein is a light emitting diode. The light emitting diode includes a substrate, an n-type semiconductor layer placed on the substrate, an active layer placed on the n-type semiconductor layer, a p-type semiconductor layer placed on the active layer, a reflective layer placed on the p-type semiconductor layer, an n-type electrode electrically connected to the n-type semiconductor layer, a p-type electrode placed on the reflective layer; and a first patterned magnetic structure placed on the reflective layer, and separated from the p-type electrode. The light emitting diode can provide improved internal quantum efficiency using the patterned magnetic structure. |
| 申请公布号 |
US2015091036(A1) |
申请公布日期 |
2015.04.02 |
| 申请号 |
US201414502597 |
申请日期 |
2014.09.30 |
| 申请人 |
GWANGJU INSTITUTE OF SCIENCE AND TECHNOLOGY |
发明人 |
PARK Seong-Ju;KIM Jae-Joon;LEEM Youngchul |
| 分类号 |
H01L33/14;H01L33/10;H01L33/06 |
主分类号 |
H01L33/14 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A light emitting diode comprising:
a substrate; an n-type semiconductor layer placed on the substrate; an active layer placed on the n-type semiconductor layer; a p-type semiconductor layer placed on the active layer; a reflective layer placed on the p-type semiconductor layer; an n-type electrode electrically connected to the n-type semiconductor layer; a p-type electrode placed on the reflective layer; and a first patterned magnetic structure placed on the reflective layer and separated from the p-type electrode. |
| 地址 |
Gwangju KR |
