HIGHLY SENSITIVE MULTILAYER RESIST FILM AND METHOD FOR IMPROVING PHOTOSENSITIVITY OF RESIST FILM

摘要

To provide a resist film configuration which is capable of improving the photosensitivity of a resist layer to EUV or electron beams without changing the photosensitivity of a resist material itself to EUV or electron beams. A thin metal layer (1) of nanometer order is provided on a laminate that is obtained by laminating a resist polymer layer (2) on a substrate (3). If the resist layer in this configuration is exposed to light, the irradiation light on the resist film is intensified by a surface plasmon effect of the metal layer (1), and thus the photosensitivity of the resist film is improved.