<p>In a particular embodiment, a semiconductor device includes a high mobility channel between a source region and a drain region. The high mobility channel extends substantially a length of a gate. The semiconductor device also includes a doped region extending from the source region or the drain region toward the high mobility channel. A portion of a substrate is positioned between the doped region and the high mobility channel.</p>
申请公布号
WO2015047709(A1)
申请公布日期
2015.04.02
申请号
WO2014US54593
申请日期
2014.09.08
申请人
QUALCOMM INCORPORATED
发明人
YANG, BIN;CHIDAMBARAM, PR;ZHU, JOHN JIANHONG;CHOI, JIHONG;YANG, DA;TODI, RAVI MAHENDRA;NALLAPATI, GIRIDHAR;GAN, CHOCK HING;CAI, MING;SENGUPTA, SAMIT