| 发明名称 |
Self-Aligned Patterning Process |
| 摘要 |
Embodiments of the present disclosure are a method of forming a semiconductor device and methods of patterning a semiconductor device. An embodiment is a method of forming a semiconductor device, the method including forming a plurality of spacers over a first hard mask layer to form a first mask pattern, and forming a first photoresist over the plurality of spacers. The method further includes patterning the first photoresist to form a second mask pattern, and patterning the first hard mask layer using the first mask pattern and the second mask pattern in a same patterning step. |
| 申请公布号 |
US2015093902(A1) |
申请公布日期 |
2015.04.02 |
| 申请号 |
US201314042896 |
申请日期 |
2013.10.01 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Huang Tsung-Min;Lee Chung-Ju |
| 分类号 |
H01L21/308;H01L21/033 |
主分类号 |
H01L21/308 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of forming a semiconductor device, the method comprising:
forming a plurality of spacers over a first hard mask layer to form a first mask pattern; forming a first photoresist over the plurality of spacers; patterning the first photoresist to form a second mask pattern; and patterning the first hard mask layer using the first mask pattern and the second mask pattern in a same patterning step. |
| 地址 |
Hsin-Chu TW |
