SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME, AND POWER SUPPLY APPARATUS

摘要

A semiconductor device includes an electrode material diffusion suppression layer provided either between a gate electrode and a gate insulation film, between Al-containing ohmic electrodes and an Au interconnection, and below the gate electrode and above the Al-containing ohmic electrodes, the electrode material diffusion suppression layer having a structure wherein a first the TaN layer, a Ta layer, and a second the TaN layer are stacked in sequence.

主权项

1. A semiconductor device comprising:
an ohmic electrode comprising an Al layer; an Au interconnection; and an electrode material diffusion suppression layer, provided between the Al layer and the Au interconnection, comprising a first TaN layer, a Ta layer, and a second TaN layer stacked in sequence.