发明名称 |
Semiconductor Device and Method of Forming Patterned Repassivation Openings Between RDL and UBM to Reduce Adverse Effects of Electro-Migration |
摘要 |
A semiconductor device has a semiconductor wafer with a first conductive layer formed over a surface of the semiconductor wafer. A first insulating layer is formed over the surface of the semiconductor wafer and first conductive layer. A second conductive layer is formed over the first insulating layer and first conductive layer. A second insulating layer is formed over the first insulating layer and second conductive layer. A plurality of openings is formed in the second insulating layer in a bump formation area of the semiconductor wafer to expose the second conductive layer and reduce adverse effects of electro-migration. The openings are separated by portions of the second insulating layer. A UBM layer is formed over the openings in the second insulating layer in the bump formation area electrically connected to the second conductive layer. A bump is formed over the UBM layer. |
申请公布号 |
US2015091165(A1) |
申请公布日期 |
2015.04.02 |
申请号 |
US201414563448 |
申请日期 |
2014.12.08 |
申请人 |
STATS ChipPAC, Ltd. |
发明人 |
Bao Xusheng;Hlaing Ma Phoo Pwint;Zuo Jian |
分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
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主权项 |
1. A method of making a semiconductor device, comprising:
providing a semiconductor die; forming a first conductive layer over the semiconductor die; forming an insulating layer over the first conductive layer; forming a plurality of openings in the insulating layer over the first conductive layer; and forming a bump over the openings in the insulating layer. |
地址 |
Singapore SG |