HEAT DISSIPATIVE ELECTRICAL ISOLATION/INSULATION STRUCTURE FOR SEMICONDUCTOR DEVICES AND METHOD OF MAKING

摘要

An isolation structure can include a structure material with thermal conductivity greater than silicon dioxide, yet electrical conductivity such that the structure material can replace silicon dioxide as an insulator. At least one column can extend to a target layer from a top surface of a semiconductor device near an active area of the device. At least one lateral portion can extend from the column(s) substantially parallel to the target layer and can extend between multiple columns in the target layer, such as in a cavity formed by lateral etching. The structure material can include, for example, aluminum nitride (AlN).

主权项

1. A structure for a semiconductor device comprising:
an active area in at least one layer of a semiconductor device, the at least one layer including a target layer below the active area, and at least one of an upper boundary layer between the target layer and the active area or a lower boundary layer below the target layer, wherein the substrate includes silicon (Si), and the at least one of an upper boundary layer and a lower boundary layer includes adding germanium (Ge) to the substrate, the at least one of an upper boundary layer and a lower boundary layer thereby including silicon germanium (SiGe); at least one column of a structure material extending from a top of the semiconductor device through the upper boundary layer to the target layer; and at least one lateral portion of the structure material extending from the at least one column below and substantially parallel to the upper boundary layer.