Semiconductor Device and Method of Manufacturing a Semiconductor Device with Lateral FET Cells and Field Plates

摘要

A method of manufacturing a semiconductor device includes providing dielectric stripe structures extending from a first surface into a semiconductor substrate between semiconductor fins. A first mask is provided that covers a first area including first stripe sections of the dielectric stripe structures and first fin sections of the semiconductor fins. The first mask exposes a second area including second stripe and second fin sections. A channel/body zone is formed in the second fin sections by introducing impurities, wherein the first mask is used as an implant mask. Using an etch mask that is based on the first mask, recess grooves are formed at least in the second stripe sections.

主权项

1. A method of manufacturing a semiconductor device, the method comprising:
providing dielectric stripe structures extending from a first surface into a semiconductor substrate between semiconductor fins; providing a first mask covering a first area including first stripe and fin sections and exposing a second area including second stripe and fin sections; forming channel/body zones in the second fin sections by introducing impurities using the first mask as an implant mask; and forming recess grooves in the second stripe sections using an etch mask based on the first mask.