发明名称 |
Double Sided NMOS/PMOS Structure and Methods of Forming the Same |
摘要 |
A chip includes a dielectric layer having a top surface and a bottom surface, a first semiconductor layer overlying and bonded to the top surface of the dielectric layer, and a first Metal Oxide-Semiconductor (MOS) transistor of a first conductivity type. The first MOS transistor includes a first gate dielectric overlying and contacting the first semiconductor layer, and a first gate electrode overlying the first gate dielectric. A second semiconductor layer is underlying and bonded to the bottom surface of the dielectric layer. A second MOS transistor of a second conductivity type opposite to the first conductivity type includes a second gate dielectric underlying and contacting the second semiconductor layer, and a second gate electrode underlying the second gate dielectric. |
申请公布号 |
US2015091066(A1) |
申请公布日期 |
2015.04.02 |
申请号 |
US201314044643 |
申请日期 |
2013.10.02 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Lee Jam-Wem |
分类号 |
H01L27/092;H01L21/768;H01L29/04 |
主分类号 |
H01L27/092 |
代理机构 |
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代理人 |
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主权项 |
1. An integrated circuit structure comprising:
a first chip comprising:
a dielectric layer comprising a top surface and a bottom surface;a first semiconductor layer overlying and bonded to the top surface of the dielectric layer; a first Metal Oxide-Semiconductor (MOS) transistor of a first conductivity type, wherein the first MOS transistor comprises:
a first gate dielectric overlying and contacting the first semiconductor layer; anda first gate electrode overlying the first gate dielectric; a second semiconductor layer underlying and bonded to the bottom surface of the dielectric layer; and a second MOS transistor of a second conductivity type opposite to the first conductivity type, wherein the second MOS transistor comprises:
a second gate dielectric underlying and contacting the second semiconductor layer; anda second gate electrode underlying the second gate dielectric. |
地址 |
Hsin-Chu TW |