发明名称 |
THIN FILM TRANSISTOR, PREPARATION METHOD THEREFOR, ARRAY SUBSTRATE, AND DISPLAY APPARATUS |
摘要 |
A thin film transistor, a preparation method therefor, an array substrate, and a display apparatus. The thin film transistor comprises an active layer (4) and an insulation layer (3) adjacent to the active layer (4). The insulation layer (3) comprises a first insulation layer. The first insulation layer consists of a first silicon oxide thin film (31) and a second silicon oxide thin film (32). The second silicon oxide thin film (32) is in direct contact with the active layer (4). The compactness of the second silicon oxide thin film (32) is greater than that of the first silicon oxide thin film (31). A good interface is formed between the second silicon oxide thin film (32) and the active layer (4), thereby reducing defect states, and improving features of the thin film transistor. |
申请公布号 |
WO2015043220(A1) |
申请公布日期 |
2015.04.02 |
申请号 |
WO2014CN78859 |
申请日期 |
2014.05.29 |
申请人 |
BOE TECHNOLOGY GROUP CO., LTD. |
发明人 |
LIU, XIANG |
分类号 |
H01L29/786;H01L21/285;H01L21/336;H01L27/12;H01L29/423;H01L29/51 |
主分类号 |
H01L29/786 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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