| 摘要 |
<p> One problem to be addressed by the present invention is to improve n-type operating characteristics of an organic semiconductor element. Another problem to be addressed by the present invention is to provide a semiconductor device having an organic semiconductor element having n-type operating characteristics greater than or equal to p-type operation electronic elements using pentacene and a CMIS circuit structure provided with such an element as a component electronic element, and in particular, a CMOS circuit structure, in order to improve n-type operating characteristics of pentacene. One means for solving the problem of the present invention is to provide an organic semiconductor element provided with a source electrode, a drain electrode, an organic semiconductor active layer region, a gate insulating film, and a gate electrode, wherein the source electrode has a multilayer structure, and all layers from the lowest layer region in contact with the active layer region to the highest layer region are sequentially formed of materials having a work function close to that of the material of the active layer region.</p> |
