| 摘要 |
PROBLEM TO BE SOLVED: To provide methods of fabricating structures to electrically insulate active or passive devices formed on a semiconductor chip.SOLUTION: Insulating regions for semiconductor substrates 301 include trenches 310 filled with dielectric filler layers 312, and field oxide regions 306. Protective caps are formed by using a dielectric layer 315 dissimilar from the dielectric materials in main portions of the trenches and the field oxide regions, so as to protect structures from erosion during later process steps. Top surfaces of insulation structures are coplanar with surfaces of the substrates. Field doping regions may be formed beneath the field oxide regions. To meet the demands of different devices, the insulation structures have different widths and depths. |
