PROCESSES FOR PASSIVATING DIELECTRIC FILMS

摘要

PROBLEM TO BE SOLVED: To provide a method for stably accumulating an upper electrode made of titanium nitride and the like on a surface of high-k film such as SrTixOy, BaTixOy, SrxBa(1-x)TiyOz, and SrBixTayOz used for an insulator with a metal-insulator-semiconductor (MIS) and metal-insulator-metal (MIM) structure, by a CVD method.SOLUTION: In a process, a substrate having a high-k layer is provided in a reaction chamber, and a chemical substance is provided into the reaction chamber under a gas phase state. The chemical compound containing fluorine is reacted with the high-k layer, and a passivation layer containing metal of fluorine and the high-k material is formed across the high-k layer. An electrode is deposited on the passivation layer. The passivation layer can protect a sensitive dielectric layer, thereby enabling deposition using precursors containing chlorine, bromine, and iodine over the passivation layer.