| 主权项 |
1. A chemical mechanical polishing composition for polishing a silicon wafer, comprising:
water; optionally, an abrasive; a cation according to formula (I):wherein R1, R2, R3, R4 are independently selected from the group consisting of a hydrogen and a C1-10alkyl group, a C1-10aryl group, a C1-10arylalkyl group and a C1-10alkylaryl group; and,
piperazine or a piperazine derivative according to formula (II)wherein R5 is selected from the group consisting of a hydrogen, a C1-10alkyl group, a C1-10aryl group, a C1-10arylalkyl group and a C1-10alkylaryl group; and,
a quaternary ammonium compound selected from the group consisting of tetramethyl ammonium hydroxide, tetraethyl ammonium hydroxide, tetrapropyl ammonium hydroxide, tetraisopropyl ammonium hydroxide, tetracyclopropyl ammonium hydroxide, tetrabutyl ammonium hydroxide, tetraisobutyl ammonium hydroxide, tetra tert-butyl ammonium hydroxide, tetra sec-butyl ammonium hydroxide, tetracyclobutyl ammonium hydroxide, tetrapentyl ammonium hydroxide, tetracyclopentyl ammonium hydroxide, tetrahexyl ammonium hydroxide, tetracyclohexyl ammonium hydroxide, and mixtures thereof; wherein the chemical mechanical polishing composition exhibits a pH of 9 to 12; and, wherein the chemical mechanical polishing composition exhibits a silicon removal rate of at least 300 nm/min. |
