SEMICONDUCTOR DEVICES AND METHODS OF FABRICATING THE SAME

摘要

A semiconductor device includes a plurality of first insulating layers and a plurality of second layers alternately and vertically stacked on a substrate. Each of the plurality of second layers includes a horizontal electrode horizontally separated by a second insulating layer. A contact plug penetrates the plurality of first insulating layers and the second insulating layer of the plurality of second layers.

主权项

1. A method of fabricating a semiconductor device, comprising:
alternately stacking a plurality of first insulating layers and a plurality of second insulating layers on a substrate; forming spaces between the plurality of second insulating layers by partially etching the plurality of second insulating layers, wherein the spaces are defined by the plurality of first insulating layers and remaining portions of the plurality of second insulating layers; forming horizontal electrodes in the spaces; and forming a contact structure penetrating the plurality of first insulating layers and the remaining portions of the plurality of second insulating layers.