BLANKMASK AND PHOTOMASK

摘要

Provided is a photomask having a high-resolution pattern of a half-pitch of 32 nm or less (particularly, a half-pitch of 22 nm or less), which is manufactured by forming a blankmask in which a light-proof film and a hard film having a small thickness and high etch selectivity with respect to the light-proof film are formed on a transparent substrate. The photomask may have a high quality by adjusting a composition ratio of a metal, silicon (Si), and light elements that constitute the light-proof film to suppress damage to the pattern caused by an XeF2 gas in an electron-beam repair process.

主权项

1. A blankmask which comprises a light-proof film and a hard film formed on a transparent substrate, wherein a degree to which the light-proof film is damaged by an injected gas in a repair process after a pattern is formed is digitized in an anisotropic ratio of 0 to 0.5, wherein the anisotropic ratio is a ratio of a lateral damage to an etched depth of the pattern.