| 发明名称 |
SEMICONDUCTOR DEVICE HAVING HIGH MOBILITY CHANNEL |
| 摘要 |
In a particular embodiment, a semiconductor device includes a high mobility channel between a source region and a drain region. The high mobility channel extends substantially a length of a gate. The semiconductor device also includes a doped region extending from the source region or the drain region toward the high mobility channel. A portion of a substrate is positioned between the doped region and the high mobility channel |
| 申请公布号 |
US2015091060(A1) |
申请公布日期 |
2015.04.02 |
| 申请号 |
US201314040366 |
申请日期 |
2013.09.27 |
| 申请人 |
QUALCOMM Incorporated |
发明人 |
Yang Bin;Chidambaram PR;Zhu John Jianhong;Choi Jihong;Yang Da;Todi Ravi Mahendra;Nallapati Giridhar;Gan Chock Hing;Cai Ming;Sengupta Samit |
| 分类号 |
H01L29/66;H01L29/778 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a high mobility channel between a source region and a drain region, wherein the high mobility channel extends substantially a length of a gate; and a doped region extending from the source region or the drain region toward the high mobility channel, wherein a portion of a substrate is positioned between the doped region and the high mobility channel. |
| 地址 |
San Diego CA US |
