| 发明名称 |
CRYSTALS OF SEMICONDUCTOR MATERIAL HAVING A TUNED BAND GAP ENERGY AND METHOD FOR PREPARATION THEREOF |
| 摘要 |
The present invention provides a semiconductor crystal comprising a semiconductor material having a tuned band gap energy, and methods for preparation thereof. More particularly, the invention provides a semiconductor crystal comprising a semiconductor material and amino acid molecules, peptides, or a combination thereof, incorporated within the crystal lattice, wherein the amino acid molecules, peptides, or combination thereof tune the band gap energy of the semiconductor material. |
| 申请公布号 |
US2015090942(A1) |
申请公布日期 |
2015.04.02 |
| 申请号 |
US201414500775 |
申请日期 |
2014.09.29 |
| 申请人 |
TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD. |
发明人 |
POKROY Boaz;BRIF Anastasia |
| 分类号 |
H01L29/167;H01L29/24;H01L29/22;H01L29/207;H01L29/227 |
主分类号 |
H01L29/167 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor crystal comprising a semiconductor material having a band gap energy and amino acid molecules, peptides, or a combination thereof, incorporated within the crystal lattice, wherein said amino acid molecules, peptides, or combination thereof tune the band gap energy of said semiconductor material. |
| 地址 |
Haifa IL |
