SUBSTRATE PROVIDED WITH MULTILAYER REFLECTIVE FILM, MASK BLANK, TRANSFER MASK, AND SEMICONDUCTOR DEVICE PRODUCTION METHOD

摘要

Provided are a substrate provided with a multilayer reflective film, a reflective mask blank, transfer mask, and semiconductor device production method, whereby false defect detection caused by surface roughness of the substrate or the film is suppressed in fault inspections using a high-sensitivity fault inspection device, and whereby critical defects such as a foreign body or a flaw can be easily discovered. The substrate provided with a multilayer reflective film has a multilayer reflective film having high refractive index layers and low refractive index layers alternately laminated on a main surface of a substrate for mask blanks used in lithography. The substrate provided with a multilayer reflective film is characterized by the surface of the substrate provided with a multilayer reflective film having an integral value (I) of no more than 180 × 10-3 for power spectral density (PSD) at a spatial frequency of 1-10 µm-1 obtained by measuring an area of 3 µm × 3 µm by using an atomic force microscope; and the maximum value for power spectral density (PSD) at a spatial frequency of 1-10 µm-1 being no more than 50 nm4.