| 摘要 |
In the deposition of semi-conductor material e.g, silicon, germanium and gallium arsenide by thermal decomposition from a vapour, e.g. trichlorosilane, silicochloroform, and germanium tetrachloride on to a substrate of e.g. silicon or germanium, the deposition is controlled by a mask which is adjacent to but not in contact with the substrate. The mask may be in the form of a ring and may be made of quartz, graphite, molybdenum, germanium, silicon, or silicon carbide. The substrate may be supported on a heated quartz base. In a modification Figs. 3 and 4 (not shown) the mask may form part of an assembly which carries the substrates.ALSO:In the deposition of silicon by thermal decomposition from a vapour, e.g. trichlorosilane, silicochloroform on to a substrate of e.g. silicon, the deposition is controlled by a mask which is adjacent to but not in contact with the substrate. The mask may be in the form of a ring and may be made of quartz, graphite, molybdenum, germanium, silicon, or silicon carbide. The substrate may be supported on a heated quartz base. In a modification (Figs. 3 and 4, not shown), the mask may form part of an assembly which carries the substrates.
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