| 摘要 |
PROBLEM TO BE SOLVED: To provide a thin film transistor that has a low off-state current, a high on-state current, and high field effect mobility.SOLUTION: In an inverted staggered thin-film transistor, a gate insulating layer is formed by laminating a nitride silicon layer and an oxide silicon layer obtained by oxidation of the nitride silicon layer, and a microcrystalline semiconductor layer which is crystal-grown from just above the boundary between the gate insulating layer and the oxide silicon layer is formed. It is possible to obtain a thin-film transistor having high crystallinity, a high on-state current, and high electron field-effect mobility because the crystal growth starts from just above the gate insulating film. In addition, a buffer layer is provided so as to reduce an off-state current. |
