发明名称 Co-Cr-Pt-B BASE ALLOY SPUTTERING TARGET, AND MANUFACTURING METHOD THEREOF
摘要 <p>PROBLEM TO BE SOLVED: To provide a Co-Cr-Pt-B base alloy sputtering target with high leakage magnetic flux density and few micro cracks in a B-rich layer.SOLUTION: In a Co-Cr-Pt-B base alloy sputtering target, the number of cracks of 0.1-20μm is 10 or less in a B-rich phase in an area (field) of 100μm×100μm. In a Co-Cr-Pt-B base alloy sputtering target manufacturing method, a Co-Cr-Pt-B base alloy cast ingot is hot-forged or hot-rolled, and then cold-rolled or cold-forged at an elongation ratio of 4% or less. Furthermore, the ingot is machine-processed into a target.</p>
申请公布号 JP2015061945(A) 申请公布日期 2015.04.02
申请号 JP20140193554 申请日期 2014.09.24
申请人 JX NIPPON MINING & METALS CORP 发明人 MORISHITA YUTO;OGINO SHINICHI;NAKAMURA YUICHIRO
分类号 C23C14/34;C22F1/10;G11B5/851 主分类号 C23C14/34
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