发明名称 |
Co-Cr-Pt-B BASE ALLOY SPUTTERING TARGET, AND MANUFACTURING METHOD THEREOF |
摘要 |
<p>PROBLEM TO BE SOLVED: To provide a Co-Cr-Pt-B base alloy sputtering target with high leakage magnetic flux density and few micro cracks in a B-rich layer.SOLUTION: In a Co-Cr-Pt-B base alloy sputtering target, the number of cracks of 0.1-20μm is 10 or less in a B-rich phase in an area (field) of 100μm×100μm. In a Co-Cr-Pt-B base alloy sputtering target manufacturing method, a Co-Cr-Pt-B base alloy cast ingot is hot-forged or hot-rolled, and then cold-rolled or cold-forged at an elongation ratio of 4% or less. Furthermore, the ingot is machine-processed into a target.</p> |
申请公布号 |
JP2015061945(A) |
申请公布日期 |
2015.04.02 |
申请号 |
JP20140193554 |
申请日期 |
2014.09.24 |
申请人 |
JX NIPPON MINING & METALS CORP |
发明人 |
MORISHITA YUTO;OGINO SHINICHI;NAKAMURA YUICHIRO |
分类号 |
C23C14/34;C22F1/10;G11B5/851 |
主分类号 |
C23C14/34 |
代理机构 |
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代理人 |
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地址 |
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