| 发明名称 |
PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS |
| 摘要 |
A plasma processing method of one embodiment of the present invention is disclosed for growing a polycrystalline silicon layer on a base material to be processed. The plasma processing method includes: (a) a step for preparing, in a processing container, the base material to be processed; and (b) a step for growing the polycrystalline silicon layer on the base material by introducing microwaves for plasma excitation into the processing container, and introducing a silicon-containing raw material gas into the processing container. |
| 申请公布号 |
US2015093886(A1) |
申请公布日期 |
2015.04.02 |
| 申请号 |
US201314396589 |
申请日期 |
2013.04.23 |
| 申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
Honda Minoru;Nakanishi Toshio;Katayama Daisuke |
| 分类号 |
H01L29/66;C30B29/06;C30B28/14;H01L21/02;H01L21/67 |
主分类号 |
H01L29/66 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A plasma processing method for growing a polycrystalline silicon layer on a substrate to be processed (“processing target substrate”), the method comprising:
preparing a processing target substrate in a processing container; and growing the polycrystalline silicon layer on the processing target substrate by introducing microwaves for plasma excitation into the processing container and a silicon-containing raw material gas into the processing container. |
| 地址 |
Tokyo JP |
