Epitaxial growth of compound semiconductors using lattice-tuned domain-matching epitaxy

摘要

A method of epitaxially growing a final film using a crystalline substrate wherein the final film cannot be grown directly on the substrate surface is disclosed. The method includes forming a transition layer on the upper surface of the substrate. The transition layer has a lattice spacing that varies between its lower and upper surfaces. The lattice spacing at the lower surface matches the lattice spacing of the substrate to within a first lattice mismatch of 7%. The lattice spacing at the upper surface matches the lattice spacing of the final film to within a second lattice mismatch of 7%. The method also includes forming the final film on the upper surface of the transition layer.

主权项

1. A method of epitaxially growing a desired film having a lattice spacing aF using a crystalline substrate having an upper surface and a lattice spacing as, the method comprising:
forming on the upper surface of the substrate at least one transition layer having a lower surface, an upper surface, a thickness h, and a lattice spacing aT(z) that varies between the lower and upper surfaces such that the lattice spacing aT(0) at the lower surface satisfies m·aT(0)=n·as to within a first lattice mismatch of 7%, where n, m are integers, and the lattice spacing aT(h) at the upper surface satisfies the relationship i·aT(h)=j·aF to within a second lattice mismatch of within 7%, where i, j are integers; and forming the desired film on the upper surface of the transition layer.