发明名称 |
LIGHT EMITTING DIODE CHIP AND LIGHT EMITTING DEVICE HAVING THE SAME |
摘要 |
A light emitting diode (LED) chip can include: a first pattern region having one or more curved parts; and a second pattern region at least partially surrounding the first pattern region. The first pattern region can include a first conductive type nitride-based semiconductor layer, an active layer, a second conductive type nitride-based semiconductor layer, a top electrode layer, and a top bump layer stacked over a substrate, the second pattern region can include a first conductive type nitride-based semiconductor layer, a bottom electrode layer, and a bottom bump layer stacked over the substrate, and the first pattern region can include one or more protrusion patterns formed in the one or more curved part. |
申请公布号 |
US2015091042(A1) |
申请公布日期 |
2015.04.02 |
申请号 |
US201414498910 |
申请日期 |
2014.09.26 |
申请人 |
Seoul Viosys Co., Ltd. |
发明人 |
Kim Chang Hoon;Kim Sang Min;In Chi Hyun;Cho Hong Suk;Park Dae Seok |
分类号 |
H01L33/24;H01L33/38 |
主分类号 |
H01L33/24 |
代理机构 |
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代理人 |
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主权项 |
1. A light emitting diode (LED) chip comprising:
a first pattern region having one or more curved parts; and a second pattern region at least partially surrounding the first pattern region, wherein the first pattern region comprises a first conductive type nitride-based semiconductor layer, an active layer, a second conductive type nitride-based semiconductor layer, a top electrode layer, and a top bump layer stacked over a substrate, wherein the second pattern region comprises a first conductive type nitride-based semiconductor layer, a bottom electrode layer, and a bottom bump layer stacked over the substrate, and wherein the first pattern region comprises one or more protrusion patterns formed in the one or more curved parts. |
地址 |
Ansan-si KR |