发明名称 VOLTAGE CONTROLLED NANO-MAGNETIC RANDOM NUMBER GENERATOR
摘要 Described is an apparatus for a voltage controlled nano-magnetic random number generator. The apparatus comprises: a free ferromagnetic layer; a fixed ferromagnetic layer positioned in a non-collinear direction relative to the free ferromagnetic layer; and a first terminal coupled to the free ferromagnetic layer, the first terminal to provide a bias voltage to the free ferromagnetic layer. Described is also an integrated circuit comprising: a random number generator including a magnetic tunnel junction (MTJ) device with non-collinearly positioned free and fixed ferromagnetic layers; and a circuit to provide an adjustable bias voltage to the free ferromagnetic layer, the circuit to control variance of current generated by the random number generator.
申请公布号 WO2015047328(A1) 申请公布日期 2015.04.02
申请号 WO2013US62378 申请日期 2013.09.27
申请人 INTEL CORPORATION 发明人 MANIPATRUNI, SASIKANTH;NIKONOV, DMITRI E.;YOUNG, IAN A.
分类号 H01L43/00 主分类号 H01L43/00
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