发明名称 PLASMA PROCESSING APPARATUS AND PLASMA PROCESSING METHOD
摘要 PROBLEM TO BE SOLVED: To provide an inductively-coupled plasma processing apparatus that allows freely and finely controlling plasma density distribution, and to provide a plasma processing method.SOLUTION: A plasma processing apparatus includes: a processing container having a dielectric window 52; a coil-shaped RF antenna 54 disposed outside the dielectric window 52; a high-frequency power supply 56 supplying high-frequency power with a constant frequency adapted for high-frequency discharge of a process gas to the RF antenna 54 to generate plasma of the process gas by inductive coupling; a floating coil 70 kept a floating state electrically and disposed outside the processing container at a position capable of being coupled with the RF antenna 54 by electromagnetic induction; and a variable capacitor 74 provided in a loop of the floating coil 70. When the orientation or the value of an induction current IIND flowing in the floating coil 70 changes according to capacitance of the variable capacitor 74, a plasma density widely changes near directly under the floating coil 70.
申请公布号 JP2015062181(A) 申请公布日期 2015.04.02
申请号 JP20140198534 申请日期 2014.09.29
申请人 TOKYO ELECTRON LTD 发明人 YAMAZAWA YOHEI;KOSHIMIZU CHISHIO;DENPO KAZUKI;YAMAWAKI JUN;SAITO MASASHI
分类号 H05H1/46;C23C14/54;C23C16/507;H01L21/3065 主分类号 H05H1/46
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