METHOD OF FABRICATING SEMICONDUCTOR DEVICE

摘要

A method for fabricating a semiconductor device includes preparing a substrate in which a first active region and a second active region are defined by a device isolation region, forming a channel region in the first active region and the second active region, respectively, forming a gate insulating layer on the first active region and a gate insulating layer on the second active region, a thickness of the gate insulating layer on the first active region being different from a thickness of the gate insulating layer on the second active region, and forming a first interface layer between the substrate and the gate insulating layer on the first active region and a second interface layer between the substrate and the gate insulating layer on the second active region.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
preparing a substrate in which a first active region and a second active region are defined by a device isolation region; forming a channel region in the first active region and the second active region, respectively; forming a first gate insulating layer on the substrate at the first active region; forming a second gate insulating layer on the first gate insulating layer at the first active region and on the substrate at the second active region,
wherein the first gate insulating layer is disposed between the substrate and the second gate insulating layer at the first active region, and is not disposed between the substrate and the second gate insulating layer at the second active region; and after forming the first gate insulating layer and second gate insulating layer, forming a first interface layer at an interface between the substrate and the first gate insulating layer at the first active region, and forming a second interface layer at the interface between the substrate and the second gate insulating layer at the second active region.