| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FABRICATING THE SAME |
| 摘要 |
In a semiconductor device and in methods of formation thereof, a semiconductor device comprises a substrate, a lower electrode on the substrate, and a dielectric layer on the lower electrode. An adhesion layer is positioned on the dielectric layer and an upper electrode is positioned on the adhesion layer. The adhesion layer contacts the dielectric layer and the upper electrode, and comprises a conductive material. |
| 申请公布号 |
US2015091133(A1) |
申请公布日期 |
2015.04.02 |
| 申请号 |
US201414315770 |
申请日期 |
2014.06.26 |
| 申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Cho Kyu-Ho;Yang Hyun-Jeong;Oh Se-Hoon;Lee Yong-Jae;IM Ki-Vin;Lim Jae-Soon;Lim Han-Jin;Chang Jae-Wan;Jung Chang-Hwa |
| 分类号 |
H01L49/02 |
主分类号 |
H01L49/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a substrate; a lower electrode on the substrate; a dielectric layer on the lower electrode; an adhesion layer on the dielectric layer; and an upper electrode on the adhesion layer, wherein the adhesion layer contacts the dielectric layer and the upper electrode, and comprises a conductive material. |
| 地址 |
Suwon-si KR |
