SEMICONDUCTOR DEVICE

摘要

A semiconductor device includes a substrate and a plurality of transistors arranged on the substrate in an array. The transistor includes a first electrode, a plurality of second electrodes, and a gate electrode. The second electrodes are arranged around the first electrode. The gate electrode is located between the first electrode and the second electrodes. The first electrode is a circle or polygon. The gate electrode is around the first electrode, and an edge of the gate electrode facing the first electrode has a shape corresponding to that of the first electrode.

主权项

1. A semiconductor device, comprising:
a substrate; and a plurality of transistors arranged on the substrate, wherein each of the transistors comprises:
an active layer, disposed on the substrate;a first electrode, disposed on the active layer;a plurality of second electrodes, disposed on the active layer, and annularly arranged on the first electrode; anda gate electrode, disposed on the active layer, and located between the first electrode and the second electrodes; wherein the first electrode is a circle or polygon, and the polygon is at least pentagon; wherein the gate electrode is around the first electrode, and an edge of the gate electrode facing the first electrode has a shape corresponding to that of the first electrode.